2
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 172
μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 900 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.6
3.0
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.7Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 900 mA, Pout
= 28 W Avg., f = 2690 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
14.5
15.6
17.5
dB
Drain Efficiency
ηD
28.0
31.1
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.2
?
dB
Adjacent Channel Power Ratio
ACPR
?
--36.7
--34.5
dBc
Input Return Loss
IRL
?
-- 1 4
-- 9
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 900 mA, Pout
=28WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2620 MHz
15.5
31.5
6.3
--38.0
-- 1 3
2655 MHz
15.5
31.1
6.3
--37.3
-- 1 4
2690 MHz
15.6
31.1
6.2
--36.7
-- 1 4
1. Part internally matched both on input and output.
(continued)
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